Title :
A new sensor structure and fabrication process for a single-chip fingerprint sensor/identifier LSI
Author :
Machida, K. ; Shigematsu, S. ; Morimura, H. ; Shimoyama, N. ; Tanabe, Y. ; Kumazaki, T. ; Kudou, K. ; Yano, M. ; Kyuragi, H.
Author_Institution :
NTT Telecommun. Energy Labs., Kanagawa, Japan
Abstract :
We propose a new sensor structure and the fabrication process for a single-chip fingerprint sensor/identifier LSI in which the sensor is stacked on a 0.5 /spl mu/m CMOS LSI. We investigate the influence of electrostatic discharge (ESD), mechanical stress, and water penetration on the sensor´s reliability. The results reveal ESD tolerance is obtained at the value of 2.0 kV, the sensor is immune to mechanical stress under the condition of 1 MPa tapping tests, and it is protected against contamination by a passivation film. The tests confirm that the sensor has sufficient reliability for conventional identification usage.
Keywords :
CMOS image sensors; electrostatic discharge; fingerprint identification; integrated circuit technology; large scale integration; passivation; reliability; 0.5 /spl mu/m CMOS LSI; 0.5 mum; 2 kV; ESD tolerance; contamination; electrostatic discharge; fabrication process; identification usage; mechanical stress; passivation film; reliability; sensor reliability; sensor structure; single-chip fingerprint identifier LSI; single-chip fingerprint sensor; tapping tests; water penetration; CMOS process; Electrostatic discharge; Fabrication; Fingerprint recognition; Large scale integration; Mechanical sensors; Protection; Stress; Testing; Water pollution;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824291
