A 20dBm E-band power amplifier in SiGe BiCMOS technology

Author

Ben Yishay, Roee ; Carmon, R. ; Katz, O. ; Sheinman, B. ; Elad, Danny

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2012

Firstpage

699

Lastpage

702

Abstract

This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA´s bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; power amplifiers; power combiners; BiCMOS technology; E-band power amplifier; PTAT bias circuit; SiGe; Wilkinson combiner; common-emitter stage; current 140 mA; current 280 mA; frequency 71 GHz to 76 GHz; gain 21 dB; size 0.12 mum; voltage 2 V; Bandwidth; BiCMOS integrated circuits; Power amplifiers; Power generation; Power measurement; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483896