Title :
Design of an integrated cascode cell for compact Ku-band power amplifiers
Author :
Dechansiaud, Adeline ; Sommet, Raphael ; Reveyrand, Tibault ; Quere, R. ; Bouw, D. ; Chang, Carole ; Camiade, M. ; Deborgies, Francois
Author_Institution :
XLIM, Brive-la-Gaillarde, France
Abstract :
This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “`integrated cascode´” has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12×100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate development exhibits a vertical size of 790 μm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors.
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; high electron mobility transistors; integrated circuit design; GaAs; MMIC amplifier; PHEMT; compact Ku-band power amplifiers; integrated cascode cell; power 2 W; pseudomorphic high electron mobility transistors; size 0.25 mum; size 413 mum; size 790 mum; Logic gates; MMICs; Microwave circuits; Shape; Stability analysis; Thermal stability; Transistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2