Two dimensional numerical simulation of temperature dependency of MOSFET out-put characteristics

Author

Djelti, Hamida ; Feham, Mohamed ; Ouslimani, Achour ; Kasbari, Abed-Elhak

Author_Institution

Dept. of Telecommun., Tlemcen Univ., Tlemcen

fYear

2008

Firstpage

340

Lastpage

343

Abstract

In this paper we present the impact of temperature on out-put MOSFET characteristics over a wide range of temperature from 300 degK to 500 degK, by using Femlab and Freefem+ tools. We have studied in particular current-voltage characteristics (ID-VDS and ID-VGS), longitudinal electric field, and the variation of drain current with temperature. We have observed a good agreement between the model of Femlab and Freefem+ tools. Two-dimensional numerical simulations are used to describe significant physics phenomena in the characteristics for 0.25 mum gate length NMOSFET transistor.

Keywords

MOSFET; numerical analysis; 2D numerical simulation; Femlab; Freefem+ tools; MOSFET out-put characteristics; NMOSFET transistor; current-voltage characteristics; longitudinal electric field; size 0.25 mum; temperature 300 K to 500 K; temperature dependency; CMOS technology; Electron mobility; MOSFET circuits; Numerical simulation; Photonic band gap; Semiconductor device modeling; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 2008. GSMM 2008. Global Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1885-5

Electronic_ISBN

978-1-4244-1886-2

Type

conf

DOI

10.1109/GSMM.2008.4534640

Filename

4534640