Title :
A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections
Author :
Aguirre, J. ; Plett, C.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
This paper describes a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line. The distributed amplifier exhibits a measured passband of 100 MHz to 50 GHz, has a small die size (1.0 /spl times/ 1.1 mm/sup 2/) and low power consumption (125 mW). This amplifier is suitable for use in communication systems.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; low-power electronics; semiconductor materials; wideband amplifiers; 0.1 to 50 GHz; 125 mW; HBT; SiGe; communication systems; constant-k m-derived sections; die size; distributed amplifier; output artificial transmission line; passband; power consumption; single-ended three-stage amplifier; Distributed amplifiers; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Passband; Power measurement; Power transmission lines; Silicon germanium; Size measurement; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212520
