Title :
A 77 GHz Transceiver for Automotive Radar System Using a 120nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs
Author :
Kim, Kyoungwoon ; Choi, Wooyeol ; Kim, Sungwon ; Seol, Gyungseon ; Seo, Kwangseok ; Kwon, Youngwoo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
Abstract :
In this work, the authors demonstrate a compact 77GHz single-chip transceiver for an automotive radar system. The transceiver consists of a low noise amplifier, mixer, doubler and power amplifier. The MMIC chip set is fabricated using a 120nm-gate-length In0.4AlAs/In0.35GaAs mHEMT. The low noise amplifier demonstrated a small signal gain of 19dB at 77GHz. The resistive mixer achieved a -11dB conversion gain. The doubler achieved 0.4dBm output power, a -5.6dB conversion gain and a difference of 18.4dBc between the 77GHz output and the fundamental output. The power amplifier demonstrated a small signal gain of 21.4dB at 77GHz with 12.3dBm output power. The single-chip transceiver demonstrated 9.3dBm output power at the transmitter and a 5dB conversion gain at the receiver
Keywords :
MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; mixers (circuits); nanotechnology; power amplifiers; road vehicle radar; transceivers; -11 dB; -5.6 dB; 120 nm; 19 dB; 21.4 dB; 5 dB; 77 GHz; In0.4AlAs-In0.35GaAs; MHEMT; MMIC chip set; automotive radar system; doubler; low noise amplifier; metamorphic HEMT; millimeter wave transceiver; power amplifier; resistive mixer; Automotive engineering; Gallium arsenide; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Radar; Transceivers; Transmitters; mHEMTs; 77GHz; Automotive radar; MHEMT; MMIC; transceiver;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319963
