Title :
Low Noise Direct Detection Sensors for Millimeter Wave Imaging
Author :
Lynch, Jonathan J. ; Schulman, Joel N. ; Moyer, Harris P.
Author_Institution :
HRL Labs., LLC, Malibu, CA
Abstract :
As millimeter wave electronic component technologies have matured, passive millimeter wave (mmW) imaging using direct detection is emerging as a cost effective approach to imaging through obscuring materials such as clothing for concealed weapons detection or sand for rotorcraft landing. This paper reviews the basic operation of W band direct detection receivers, and describes progress made at HRL in the development of mmW front end IC components. InP HEMT LNAs provide high gain and low noise, appropriate for high sensitivity front ends that require relatively short integration times. Sb-based MMIC detectors provide high sensitivity and low noise, relaxing the gain requirements of the LNA. Finally, promising results of the ongoing DARPA MIATA program demonstrate reasonable sensitivity of a purely passive imaging module, the first step toward imaging without the need for LNAs
Keywords :
III-V semiconductors; MMIC; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave detectors; millimetre wave imaging; millimetre wave receivers; DARPA MIATA program; HEMT LNA; InP; MMIC detectors; W band; direct detection receivers; front end integrated circuit components; low noise amplifiers; low noise direct detection sensors; passive millimeter wave imaging; rotorcraft landing; weapons detection; zero bias detectors; Clothing; Costs; Electronic components; HEMTs; Image sensors; Indium phosphide; Integrated circuit noise; MMICs; Millimeter wave technology; Weapons; Millimeter wave imaging; W band; direct detection receivers; low noise amplifiers; zero bias detectors;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319937