DocumentCode :
1646649
Title :
Impact of the non-ideal temperature dependence of IC-VBE on ultra-wide temperature range SiGe HBT bandgap reference circuits
Author :
Luo, Lan ; Niu, Guofu ; Najafizadeh, Laleh ; Cressler, John D.
Author_Institution :
ECE Dept., Auburn Univ., Auburn, AL, USA
fYear :
2010
Firstpage :
220
Lastpage :
223
Abstract :
We investigate the impact of the non-ideal temperature dependence of IC-VBE on the performance of ultra-wide temperature range SiGe HBT bandgap reference circuits. Both the slope and intercept of IC-VBE show temperature dependences that significantly differ from “ideal” Shockley theory widely used in BGR analysis and design, and are shown to have significant impact on ΔVBE(T), IC (T) and VBE(T).
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; SiGe; bandgap reference circuits; ideal Shockley theory; non-ideal temperature dependence; ultrawide temperature range HBT; Integrated circuit modeling; Noise measurement; Silicon germanium; Temperature dependence; Temperature distribution; Temperature measurement; Bandgap reference; Non-ideality factor; PTAT; Saturation current; SiGe HBT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
ISSN :
1088-9299
Print_ISBN :
978-1-4244-8578-9
Type :
conf
DOI :
10.1109/BIPOL.2010.5668007
Filename :
5668007
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1646649
بازگشت