High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

Author

Mizuno, T. ; Takagi, S. ; Sugiyama, N. ; Koga, J. ; Tezuka, T. ; Usuda, K. ; Hatakeyama, T. ; Kurobe, A. ; Toriumi, A.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

Firstpage

934

Lastpage

936

Abstract

We have proposed a new MOSFET structure, strained-Si/Si/sub 0.9/Ge/sub 0.1/-on-Insulator (SSGOI) MOSFETs applicable to the sub-100 nm generation. This SSGOI structure was successfully fabricated by the combination of SIMOX technology and the Si re-growth technique. The strained-Si in SSGOI was found to have good crystal quality and very flat interfaces. SSGOI p-MOSFETs exhibited good FET characteristics. It was demonstrated, for the first time, that the hole mobility of the SSGOI p-MOSFETs is higher that of the universal mobility of conventional Si p-MOSFETs.

Keywords

Ge-Si alloys; MOSFET; SIMOX; hole mobility; silicon; substrates; 100 nm; FET characteristics; PMOSFET; SIMOX technology; Si re-growth technique; Si-Si/sub 0.9/Ge/sub 0.1/; SiGe; SiGe-on-insulator substrates; hole mobility; p-channnel MOSFET; strained-Si p-MOSFETs; Annealing; Capacitive sensors; Charge carrier processes; Electron mobility; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824303

Filename

824303