Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

Author

Chan, K.T. ; Chin, A. ; McAlister, S.P. ; Chang, C.Y. ; Tseng, C. ; Liang, V. ; Chen, J.K. ; Chien, S.C. ; Duh, D.S. ; Lin, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

2003

Firstpage

963

Abstract

Very low power loss /spl les/0.6 dB at 110 GHz and noise of <0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of /spl sim/ 4 MeV for easier process integration into current VLSI technology.

Keywords

VLSI; circuit simulation; coplanar transmission lines; electrical resistivity; equivalent circuits; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; integrated circuit noise; ion implantation; 0.25 dB; 0.6 dB; 110 GHz; 18 GHz; 2.5 dB; 4 MeV; 5 dB; Si; Si substrate fabricated transmission lines; VLSI technology process integration; coplanar transmission lines; equivalent circuit models; implantation energy; ion implantation; low RF loss/noise transmission lines; power loss; proton implantation; substrate resistivity; Ion implantation; Loss measurement; Noise measurement; Power measurement; Power transmission lines; Propagation losses; Protons; Radio frequency; Transmission line measurements; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212529

Filename

1212529