Title :
X-band AlGaN/GaN HEMT with over 80W Output Power
Author :
Takagi, Kazutaka ; Masuda, Kazutoshi ; Kashiwabara, Yasushi ; Sakurai, Hiroyuki ; Matsushita, Keiichi ; Takatsuka, Shunsuke ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution :
Microwave Solid-State Eng. Dept., Toshiba Corp., Kawasaki
Abstract :
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under VDS=30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 11.52 mm; 3 dB; 30 V; 9.5 GHz; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; CW operating conditions; X-band AlGaN/GaN HEMT; gain compression level; output power characteristics; power added efficiency; Aluminum gallium nitride; Artificial intelligence; Gallium nitride; HEMTs; Packaging; Power amplifiers; Power generation; Silicon compounds; Temperature dependence; Voltage; GaN; HEMT; X-band; power amplifier;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319950
