X-band AlGaN/GaN HEMT with over 80W Output Power

Author

Takagi, Kazutaka ; Masuda, Kazutoshi ; Kashiwabara, Yasushi ; Sakurai, Hiroyuki ; Matsushita, Keiichi ; Takatsuka, Shunsuke ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio

Author_Institution

Microwave Solid-State Eng. Dept., Toshiba Corp., Kawasaki

fYear

2006

Firstpage

265

Lastpage

268

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under V_DS=30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; 11.52 mm; 3 dB; 30 V; 9.5 GHz; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; CW operating conditions; X-band AlGaN/GaN HEMT; gain compression level; output power characteristics; power added efficiency; Aluminum gallium nitride; Artificial intelligence; Gallium nitride; HEMTs; Packaging; Power amplifiers; Power generation; Silicon compounds; Temperature dependence; Voltage; GaN; HEMT; X-band; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319950

Filename

4110037