Title :
Analysis of a GaAs E-D inverter chain
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., NY, USA
Abstract :
Analytic formulas for the noise margins and pull-up and pull-down delays due to an input pulse with finite rise and fall times (rather than a step) of a GaAs enhancement-depletion (E-D) inverter and, by extension, of an inverter chain are derived. The formulas relate the DC and speed performance of an inverter to the current-voltage characteristics of the transistors, and indirectly to the device parameters. It is shown that for an inverter chain to be self-restoring, the logical-high and logical-low levels of the output voltage cannot be arbitrarily specified, that noise margins can be improved only logarithmically as the width ratios of the transistors are adjusted, and that the pull-up and pull-down delays are, to first order, proportional to the risetime of the input
Keywords :
III-V semiconductors; MOS integrated circuits; gallium arsenide; integrated logic circuits; invertors; E-D inverter chain; GaAs; current-voltage characteristics; device parameters; enhancement-depletion; fall times; input pulse; inverter chain; logical-high levels; logical-low levels; noise margins; pull-down delays; pull-up delays; rise times; speed performance; width ratios; Circuit noise; Circuit simulation; Current-voltage characteristics; Delay effects; Delay estimation; Digital circuits; Gallium arsenide; MOS devices; Pulse inverters; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location :
Portland, OR
DOI :
10.1109/ISCAS.1989.100554