60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a conventional mesa structure. The devices employ a 14 nm highly doped InGaAs base and a 60 nm InP collector containing an InGaAs/InAlAs superlattice grade. Devices employing a 400 nm emitter exhibit a maximum f_T = 660 GHz with a 218 GHz f _max - this is a record f_T for a DHBT. The devices have been scaled vertically for reduced base and collector electron transit times, and the base-collector mesa has been further scaled to minimize the capacitance C_cb associated with the base contact area. The peak current gain beta ap 95, BV_CEO = 2.5 V, BV _CBO = 2.7 V, and the devices operate in excess of 30 mW/mum ²