Title :
High temperature SiC-sensors
Author :
Pristavu, G. ; Draghici, F. ; Badila, M. ; Brezeanu, G. ; Pascu, R. ; Craciunoiu, F.
Author_Institution :
Devices, Circuits & Electron. Archit., Univ. “Politeh.” of Bucharest, Bucharest, Romania
Abstract :
The technological flow similarities between two devices on silicon carbide, a Schottky diode and a MOS capacitor, are presented. The devices are used as temperature and hydrogen sensors, respectively. Both devices are characterized up to high temperatures, 400°C for Schottky diode and 300°C for MOS capacitor. Performed measurements demonstrate good forward voltage linearity with temperature (Schottky diode) and the absence of mobile oxide charges (MOS capacitor).
Keywords :
MOS capacitors; Schottky diodes; gas sensors; silicon compounds; temperature sensors; wide band gap semiconductors; MOS capacitor; Schottky diode; SiC; high temperature silicon carbide sensors; hydrogen sensor; temperature 300 degC; temperature 400 degC; temperature sensor; MOS capacitors; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; MOS capacitor; Schottky barrier diode; Silicon carbide; high temperature devices; sensors;
Conference_Titel :
Design and Technology in Electronic Packaging (SIITME), 2014 IEEE 20th International Symposium for
Conference_Location :
Bucharest
DOI :
10.1109/SIITME.2014.6967024
