High power 1550nm InGaAsP/InP lasers with optimized carrier injection efficiency

Author

Qing Ke ; Shaoyang Tan ; Dan Lu ; Ruikang Zhang ; Wei Wang ; Chen Ji

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

The dependence of the laser performance on the distance of the P-InP layer to active region in 1.55-μm high power InGaAsP/InP board area lasers is studied. Structures with different distance of P-InP layer to active region is compared in simulation and lasers with active region displaced towards the p-cladding layer is the best performance. A 1.55-μm high power laser with optimized carrier injection efficiency is manufactured and a maximum single-mode power of 175 mW is obtained from a 1mm long uncoated laser.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser modes; semiconductor lasers; InGaAsP-InP; active region; high power board area lasers; laser performance; maximum single-mode power; optimized carrier injection efficiency; p-cladding layer; power 175 mW; wavelength 1550 nm; Analytical models; Boards; Charge carrier processes; III-V semiconductor materials; Indium phosphide; Optical fiber communication; Optical waveguides; carrier injection; high power; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2015 14th International Conference on

Conference_Location

Nanjing

Type

conf

DOI

10.1109/ICOCN.2015.7203677

Filename

7203677