Title :
86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology
Author :
Knapp, H. ; Wurzer, M. ; Meister, T.F. ; Aufinger, K. ; Bock, J. ; Boguth, S. ; Schafer, H.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
We present static and dynamic frequency dividers manufactured in a 200 GHz f/sub T/ SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.
Keywords :
Ge-Si alloys; bipolar MIMIC; frequency dividers; high-speed integrated circuits; integrated circuit design; millimetre wave frequency convertors; semiconductor materials; 110 GHz; 110 GHz dynamic frequency dividers; 200 GHz; 310 mW; 86 GHz; 86 GHz static frequency dividers; 900 mW; SiGe; SiGe bipolar technology; divide ratio; high-speed circuit design; power consumption; regenerative frequency division; Circuit synthesis; Clocks; Energy consumption; Flip-flops; Frequency conversion; Germanium silicon alloys; Latches; Master-slave; Mixers; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212553
