Title :
Single ended to differential MHEMT transimpedance amplifier with 66 dB-/spl Omega/ differential transimpedance and 50 GHz bandwidth
Author :
Roux, P. ; Baeyens, Y. ; Houtsma, V. ; Leven, A. ; Weiner, J. ; Benz, A. ; Chen, Y.K.
Author_Institution :
Lucent Technol. - Bell Labs., Le Plessis, France
Abstract :
In this paper, we demonstrate a single ended to differential transimpedance amplifier (TIA) with 66 dB/spl Omega/ transimpedance gain, a 50 GHz 3-dB bandwidth and up to 700 mVp-p differential output voltage, fabricated in a 6-inch MHEMT process. The state-of-the-art gain-bandwidth product of this amplifier (>3 THz), combined with its small chip size (1.9/spl times/1.1 mm/sup 2/), high sensitivity and low power consumption (<350 mW) demonstrate the capabilities of a lumped MHEMT TIA design to realize a low cost receiver for 40 Gb/s fiber optic communication systems.
Keywords :
HEMT integrated circuits; S-parameters; differential amplifiers; field effect analogue integrated circuits; integrated circuit design; low-power electronics; optical receivers; wideband amplifiers; 120 GHz; 3-dB bandwidth; 350 mW; 40 Gb/s fiber optic communication systems; 40 Gbit/s; 50 GHz; 6 inch; 6-inch MHEMT process; 700 mS/mm; 700 mV; differential output voltage; gain-bandwidth product; high sensitivity; low cost receiver; low power consumption; maximum transconductance; metamorphic HEMT foundry technology; single ended to differential MHEMT transimpedance amplifier; single-ended S-parameters; small chip size; transimpedance gain; transition frequency; Bandwidth; Differential amplifiers; Energy consumption; High power amplifiers; Optical amplifiers; Optical design; Optical fiber amplifiers; Semiconductor optical amplifiers; Voltage; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212582
