DocumentCode :
1648099
Title :
Technological Scaling and Impact on UWB Configurable RF Signal Source
Author :
Rohde, U.L. ; Poddar, A.K.
Author_Institution :
Fellow, IEEE, Synergy Microwave Corporation, 201 McLean Boulevard, Paterson, NJ 07504, USA
fYear :
2006
Firstpage :
1
Lastpage :
4
Abstract :
The coexistence of second and third generation wireless system requires multi-mode, multi-band and multi-standard mobile communication systems, therefore, requiring a configurable RF signal source (VCO) that may replace several narrow band VCO modules by a single low noise ultrawideband (UWB) adaptable RF signal source. The performance of the wireless communication systems strongly depends on the speed of devices, and technological scaling has driven this momentum towards achieving faster speed and high level of integration. This paper investigates the impact of device scaling on phase noise of the UWB (2-8GHz) configurable coupled N-Push voltage controlled oscillator (VCO) in SiGe HBT, which has recently emerged as a strong contender for RF and mixed signal applications.
Keywords :
Germanium silicon alloys; Mobile communication; Narrowband; Noise generators; Phase noise; Signal generators; Silicon germanium; Ultra wideband technology; Voltage-controlled oscillators; Wireless communication; N-Push; SiGe HBTs; UWB; VCO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sarnoff Symposium, 2006 IEEE
Conference_Location :
Princeton, NJ
Print_ISBN :
978-1-4244-0002-7
Electronic_ISBN :
978-1-4244-0003-4
Type :
conf
DOI :
10.1109/SARNOF.2006.4534730
Filename :
4534730
Link To Document :
بازگشت