DocumentCode
1648105
Title
SiGe Heterojunction Bipolar Transistor and Its Applications in Microwave Communication Systems
Author
Jia, Sumei ; Yang, Ruixia ; Guo, Hongjun
Author_Institution
Sch. of Inf. Eng., Hebei Univ. of Technol., Tianjin, China
fYear
2011
Firstpage
1
Lastpage
4
Abstract
SiGe heterojunction bipolar transistor (HBT) technology has been widely applicated in microwave communication system since 1987 as first SiGe HBT was invented. In this paper, its development is reviewed and its propertis, structures, manufacturing process, and application are introduced.
Keywords
bipolar transistors; germanium compounds; radiocommunication; silicon compounds; HBT; SiGe; manufacturing process; microwave communication systems; unction bipolar transistor; Heterojunction bipolar transistors; Manufacturing processes; Microwave communication; Microwave transistors; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
Conference_Location
Wuhan
ISSN
2161-9646
Print_ISBN
978-1-4244-6250-6
Type
conf
DOI
10.1109/wicom.2011.6040276
Filename
6040276
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