Title :
SiGe Heterojunction Bipolar Transistor and Its Applications in Microwave Communication Systems
Author :
Jia, Sumei ; Yang, Ruixia ; Guo, Hongjun
Author_Institution :
Sch. of Inf. Eng., Hebei Univ. of Technol., Tianjin, China
Abstract :
SiGe heterojunction bipolar transistor (HBT) technology has been widely applicated in microwave communication system since 1987 as first SiGe HBT was invented. In this paper, its development is reviewed and its propertis, structures, manufacturing process, and application are introduced.
Keywords :
bipolar transistors; germanium compounds; radiocommunication; silicon compounds; HBT; SiGe; manufacturing process; microwave communication systems; unction bipolar transistor; Heterojunction bipolar transistors; Manufacturing processes; Microwave communication; Microwave transistors; Silicon; Silicon germanium;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-6250-6
DOI :
10.1109/wicom.2011.6040276
