Title :
A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications
Author :
Toupé, R. ; Deval, Y. ; Bégueret, J. -B
Author_Institution :
IMS Lab., Univ. of Bordeaux, Bordeaux, France
Abstract :
This paper presents a 125GHz LC-VCO dedicated to mmW applications. It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a ft and fmax of 260GHz and 340GHz respectively. Under a nominal power supply of 1.8V, the 125GHz VCO dissipates 54mA (with output buffers) for a measured phase noise of -75dBc/Hz at 1MHz offset from the 125GHz carrier and achieves a tuning range of 2GHz with a size of 0.25 mm2.
Keywords :
Ge-Si alloys; bipolar transistors; carbon; millimetre wave oscillators; phase noise; voltage-controlled oscillators; B3T bipolar technology; European project DOTFIVE; LC-VCO; NPN transistors; STMicroelectronics; SiGe:C; current 54 mA; frequency 125 EHz; mmW applications; phase noise; voltage 1.8 V; Microstrip; Phase noise; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators; Millimeter-wave integrated circuits; SiGe Bipolar technology; phase noise; voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668065
