Title :
Output power and efficiency in full-bridged MOSFET power inverter operating at shortwave frequency
Author :
Ikeda, Hiroaki ; Suzuki, Taiju ; Hayeiwa, Kazuhisa ; Yoshida, Hirofumi ; Shinohara, Shigenobu
Author_Institution :
Shizuoka Univ., Hamamatsu, Japan
Abstract :
Power loss factors in designing the full-bridge MOSFET power inverter operating at shortwave frequencies have been analyzed to improve the power conversion efficiency at a specified output power. Despite the difficulty in parallel connection of the MOSFETs in each MOSFET array, the parallel connection of the MOSFETs on the planar circuit board enhanced the output power to 500 W with a power conversion efficiency of nearly 80% at as high as 3.7 MHz. The experimental device, which had an output power of 500 W, operated reliably without any extraordinary temperature rise
Keywords :
insulated gate field effect transistors; invertors; losses; power transistors; 3.7 MHz; 500 W; MOSFET; SW; design; efficiency; inverter; output power; parallel connection; planar circuit board; power losses; power transistors; shortwave frequency; Delay effects; Delay lines; Frequency conversion; Inverters; MOSFET circuits; Power MOSFET; Power conversion; Power generation; Printed circuits; Voltage;
Conference_Titel :
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location :
Pacific Grove, CA
Print_ISBN :
0-87942-600-4
DOI :
10.1109/IECON.1990.149298
