Title :
Graphene for electronic applications - Transistors and more
Author_Institution :
Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
During the last five years, the new material graphene has gained increasing attention in the device community. The progress in the development of graphene transistors is breathtaking and graphene-based devices are now considered as an option for a post-Si electronics. However, to realistically assess the potential of graphene, the existing problems with graphene and the options to solve them have to be analyzed carefully. The present paper provides an overview of the current status of graphene transistor development and discusses the prospects and problems of these devices.
Keywords :
MOSFET; graphene; MOSFET; RF transistor; device community; electronic application; graphene transistor; graphene-based device; FETs; Logic gates; MOSFET circuits; Photonic band gap; Radio frequency; Silicon; Graphene; MOSFET; RF transistor; bandgap; carrier transport; mobility; transistor;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668069