DocumentCode
1648301
Title
Probability distribution modelling of electromigration induced failure times
Author
Loupis, M.I. ; Avaritsiotis, J.N.
Author_Institution
Sch. of Electr. Eng., Nat. Tech. Univ. of Athens, Greece
fYear
1991
Firstpage
259
Abstract
It has been shown that life data from electromigration tests on TiW+Al/Cu bilayer interconnects, under four different ambient temperatures are better fitted to a log extreme value distribution than to a Weibull or a lognormal one. The combination of the authors´ results with simulated life data modeling done by J.M. Schoen (1980) indicates the same trend. It is believed that the lognormal distribution, which has been extensively used in electromigration studies, may be an inaccurate model of the phenomenon
Keywords
aluminium alloys; circuit reliability; copper alloys; electromigration; failure analysis; metallisation; probability; titanium compounds; TiW-AlCu; bilayer interconnects; electromigration induced failure times; electromigration tests; life data; log extreme value distribution; lognormal distribution; probability distribution modelling; Circuits; Conductive films; Conductors; Electromigration; Electrons; Grain size; Probability distribution; Statistical distributions; Testing; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location
LJubljana
Print_ISBN
0-87942-655-1
Type
conf
DOI
10.1109/MELCON.1991.161826
Filename
161826
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