Title :
A simplified low voltage smart power technology
Author :
Berta, F. ; Hidalgo, S. ; Godignon, P. ; Rebollo, J. ; Millan, J.
Author_Institution :
Centro Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain
Abstract :
A self-isolated smart power process using only eight photolithographic steps has been developed. It allows the fabrication of high-voltage VDMOS and p-channel MOS transistors, a low-voltage CMOS logic, n-p-n bipolar transistors, diodes, Zeners, and high value capacitors. The VDMOS device is fabricated by a double diffused process and the same diffusion is used for the n-channel transistor well and for the VDMOS body. A process monitor chip has been fabricated and the different devices have been measured, showing the feasibility of such a technology and the excellent agreement with previously obtained simulation results
Keywords :
BIMOS integrated circuits; integrated circuit technology; power integrated circuits; BiCMOS; BiMOS IC; capacitors; double diffused process; fabrication; high-voltage VDMOS; low voltage; low-voltage CMOS logic; n-channel transistor well; n-p-n bipolar transistors; p-channel MOS transistors; photolithographic steps; process monitor chip; self-isolated smart power process; smart power technology; Bipolar transistors; CMOS logic circuits; CMOS technology; Diodes; Fabrication; Logic devices; Low voltage; MOS capacitors; MOSFETs; Monitoring;
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161827
