Modeling and measurements of novel high k monolithic transformers

Author

Aly, A.H. ; Elsharawy, B.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

2

fYear

2003

Firstpage

1247

Abstract

This paper presents modeling and measurements of a novel monolithic transformer with high coupling k and quality factor Q characteristics. The present transformer utilizes a Z-shaped multilayer metalization to increase k without sacrificing Q. The new transformer has been fabricated using Motorola 0.18 micron copper process. A simple 2-port lumped circuit model is used to model the new design. Experimental data shows a good agreement with predicted data obtained from an HFSS software simulator. An increase of about 10% in mutual coupling and 15% in Q has been achieved. For a modest increase in k of about 5%, Q can be increased by up to 20%.

Keywords

MMIC; Q-factor; circuit simulation; equivalent circuits; integrated circuit metallisation; transformers; two-port networks; 0.18 micron; HFSS software simulator; Z-shaped multilayer metalization; high k monolithic transformers; mutual coupling; quality factor; two-port lumped circuit model; Circuit simulation; Copper; Coupling circuits; High K dielectric materials; High-K gate dielectrics; Nonhomogeneous media; Predictive models; Q factor; Q measurement; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212595

Filename

1212595