InP/InGaAs HBTs using crystallographically defined emitter contact technology

Author

Moonjung Kim ; Soo-Kun Jeon ; Seong-Ho Shin ; Kyounghoon Yang ; Young-Se Kwon

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Adv. Inst. of Sci. & Technol., Gyunggi, South Korea

Volume

2

fYear

2003

Firstpage

1279

Abstract

New self-alignment techniques employing crystallographically defined emitter contact (CDC) technologies have been developed to fabricate InP/InGaAs heterojunction bipolar transistors (HBTs). The CDC technologies utilize the anisotropic wet etching characteristics of the InP and InGaAs dummy emitter layers, grown on the typical HBT layer structure. The shape of the emitter contact is determined by the crystallographically etched profiles of the InP and InGaAs dummy emitter layers. The fabricated HBTs demonstrated excellent device performance characteristics, indicating the effectiveness of the new self-alignment technology.

Keywords

III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; anisotropic wet etching; crystallographically defined emitter contact technology; self-alignment technique; Anisotropic magnetoresistance; Crystallography; Cutoff frequency; Energy consumption; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212603

Filename

1212603