Title :
InP/InGaAs HBTs using crystallographically defined emitter contact technology
Author :
Moonjung Kim ; Soo-Kun Jeon ; Seong-Ho Shin ; Kyounghoon Yang ; Young-Se Kwon
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., Adv. Inst. of Sci. & Technol., Gyunggi, South Korea
Abstract :
New self-alignment techniques employing crystallographically defined emitter contact (CDC) technologies have been developed to fabricate InP/InGaAs heterojunction bipolar transistors (HBTs). The CDC technologies utilize the anisotropic wet etching characteristics of the InP and InGaAs dummy emitter layers, grown on the typical HBT layer structure. The shape of the emitter contact is determined by the crystallographically etched profiles of the InP and InGaAs dummy emitter layers. The fabricated HBTs demonstrated excellent device performance characteristics, indicating the effectiveness of the new self-alignment technology.
Keywords :
III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; anisotropic wet etching; crystallographically defined emitter contact technology; self-alignment technique; Anisotropic magnetoresistance; Crystallography; Cutoff frequency; Energy consumption; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212603
