Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

Author

Nada, Masahiro ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Ishibashi, Takayuki ; Matsuzaki, Hideaki

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

Volume

32

Issue

8

fYear

2014

fDate

15-Apr-14

Firstpage

1543

Lastpage

1548

Abstract

A 25-Gbit/s avalanche photodiode (APD) using an inverted p-down structure and triple-mesa structure for eliminating an edge breakdown and reducing an electric field at a surface of the device is proposed and examined. Active area dependence of dark current and activation energy as small as 0.17 eV strongly suggest that the surface leakage current is negligible, and the edge breakdown does not occur. As for RF characteristics, sufficient 3-dB bandwidth of 18 GHz for 25-Gbit/s operation is obtained. We experimentally find that our triple-mesa inverted structure successfully eliminates the possible components which affect the reliability and stability of the APDs.

Keywords

avalanche breakdown; avalanche photodiodes; dark conductivity; leakage currents; semiconductor device breakdown; semiconductor device reliability; APD reliability; APD stability; RF characteristics; activation energy; active area dependence; bandwidth 18 GHz; bit rate 25 Gbit/s; dark current; edge breakdown; electric field; inverted p-down structure; surface leakage current; triple-mesa avalanche photodiode; triple-mesa inverted structure; Absorption; Dark current; Electric breakdown; Electric fields; Photoconductivity; Reliability; Temperature measurement; 25 Gbit/s.; Avalanche photodiode (APD); InAlAs; edge breakdwon; surface leakage current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2308512

Filename

6755456