DocumentCode
1648812
Title
A high performance V-band monolithic quadruple sub-harmonic mixer
Author
Won-Young Uhm ; Woo-Suk Sul ; Hyo-Jong Han ; Sung-Chan Kim ; Han-Sin Lee ; Dan An ; Sam-Dong Kim ; Dong-Hoon Shin ; Hyung-Moo Park ; Jin-Koo Rhee
Author_Institution
Millimeter-wave INnovation Technol. Res. Center, Dongguk Univ., Seoul, South Korea
Volume
2
fYear
2003
Firstpage
1319
Abstract
In this paper, we present a high performance V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While the typical sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on sub-harmonic mixer with APDP (anti parallel diode pair). Upon the typical mixer design, additional stubs are placed with the modification of original stub length. And the 0.1 /spl mu/m pseudomorphic high electron mobility transistors (PHEMTs) providing better gain are positioned to each port. Used lumped elements at IF port, it provides selectivity of IF frequency, and increases isolation. Maximum conversion gain of 0.8 dB at a LO frequency of 14.5 GHz and at a RF frequency of 60.4 GHz is measured. Both LO-to-RF and LO-to-IF isolations are higher than 40 dB. These conversion gain results and isolation characteristic are the best performances reported among the quadruple sub-harmonic mixers operating in the V-band millimeter wave frequency thus far.
Keywords
HEMT integrated circuits; MMIC mixers; field effect MIMIC; millimetre wave frequency convertors; millimetre wave mixers; 0.1 micron; 0.8 dB; 14.5 GHz; 60.4 GHz; IF frequency; LO-to-IF isolations; LO-to-RF isolations; PHEMTs; V-band; anti parallel diode pair; conversion gain; millimeter wave down converter applications; quadruple sub-harmonic mixer; selectivity; stub length; Diodes; Electron mobility; Frequency conversion; Gain; HEMTs; MODFETs; Millimeter wave circuits; Millimeter wave transistors; Mixers; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212613
Filename
1212613
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