• DocumentCode
    1648870
  • Title

    Monolithic integration of InSb Hall-effect devices with Si LSI on Si substrate

  • Author

    Kunimi, Y. ; Sakurai, A. ; Akiyama, S. ; Fujita, H. ; Shibata, Y. ; Nagakura, K. ; Noma, Y. ; Yamamoto, T. ; Yamaha, Y.

  • Author_Institution
    Magn. Sensors Process Technol. & Dev. Dept., Asahi-KASEI Microdevices Corp., Shizuoka, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes for the first time, monolithic integration of high quality InSb Hall device with Si-LSI. Hall device was connected to Si-LSI with metal and controlled by Si-LSI. Temperature drift of output voltage from Hall device could be made within 2% during wide temperature range from -40 to 125 degree C.
  • Keywords
    Hall effect devices; indium compounds; large scale integration; monolithic integrated circuits; silicon; Hall-effect devices; InSb; LSI; Si; monolithic Integration; output voltage; temperature -40 degC to 125 degC; temperature drift; Hall effect devices; Large scale integration; Monolithic integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424208
  • Filename
    5424208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1648870