Title :
Table of contents
Abstract :
The following topics are dealt with: bipolar circuit; BiCMOS circuit; RF voltage controlled oscillator; mmwave voltage controlled oscillator; high bitrate circuit; C-BiCMOS device; C-bipolar device; mmwave transceiver; BiCMOS component; 4G radio design; power amplifier; thermal limitation; high-frequency modeling; noise modeling; mixer; low noise amplifier; and analog potpourri.
Keywords :
4G mobile communication; BiCMOS integrated circuits; analogue integrated circuits; bipolar integrated circuits; low noise amplifiers; millimetre wave oscillators; mixers (circuits); power amplifiers; radiofrequency integrated circuits; transceivers; voltage-controlled oscillators; 4G radio design; BiCMOS circuit; BiCMOS component; C-BiCMOS device; C-bipolar device; RF voltage controlled oscillator; analog potpourri; bipolar circuit; high bitrate circuit; high-frequency modeling; low noise amplifier; mixer; mmwave transceiver; mmwave voltage controlled oscillator; noise modeling; power amplifier; thermal limitation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668095
