Title :
Improved microwave-optical reception applying double amplification in photo transistors
Author_Institution :
Budapest Univ. of Technol. & Econ., Hungary
Abstract :
The detection efficiency of photo transistors is improved by a new approach. Its basic principle is the double utilization of the transistor gain mechanism. As a result a significant increase in the responsivity (e.g. 25 dB) is obtained in a narrow band. The new approach is advantageously applicable for the reception of subcarrier multiplexed signals.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave detectors; microwave photonics; photodetectors; phototransistors; subcarrier multiplexing; detection efficiency; double amplification; enhanced photosensitivity GaAs MESFET; microwave-optical reception; narrow band responsivity; phototransistors; subcarrier multiplexed signal reception; transistor gain mechanism; Feedback loop; Microwave transistors; Optical attenuators; Optical feedback; Optical modulation; Optical noise; Optical receivers; Optical sensors; Signal detection; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212621
