DocumentCode :
1649165
Title :
Rigorous analysis of traveling wave photodetectors under high-power illumination
Author :
Pasalic, D. ; Vahldieck, R. ; Aste, A.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Volume :
2
fYear :
2003
Firstpage :
1375
Abstract :
An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.
Keywords :
electrical conductivity; electromagnetic field theory; microwave photonics; optical fibre communication; optical receivers; photodetectors; semiconductor device models; 2D drift-diffusion based semiconductor simulation; 2D simulation; 3D simulation; RF performance; TWPD; conductivity profile; full-wave EM analysis; high-power illumination; hybrid method analysis; illumination optical power levels; microwave fiber optic links; semiconductor layers; traveling-wave photodetectors; Analytical models; Circuit simulation; Conductivity; Lighting; Microwave devices; Optical waveguides; Performance analysis; Photodetectors; Radio frequency; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7695-1
Type :
conf
DOI :
10.1109/MWSYM.2003.1212627
Filename :
1212627
Link To Document :
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