Title :
Temperature compensation of silicon micromechanical resonators via degenerate doping
Author :
Samarao, Ashwin K. ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report on the degenerate doping of a silicon resonator as a new method for reducing its temperature coefficient of frequency (TCF). This is the first TCF reduction technique reported till date that takes advantage of free charge carrier effects on the elastic constants of silicon. The TCF of silicon bulk acoustic resonators (SiBAR) are reduced from -29 ppm/°C to -1.5 ppm/°C on 5 ¿m thick devices using degenerate boron doping and to -2.72 ppm/°C on 20 ¿m thick devices using boron-assisted aluminum doping while maintaining a high quality factor (Q) of 28000 in vacuum.
Keywords :
acoustic resonators; boron; bulk acoustic wave devices; compensation; elastic constants; elemental semiconductors; micromechanical resonators; semiconductor doping; silicon; Si:B; bulk acoustic resonator; degenerate doping; elastic constant; free charge carrier effect; micromechanical resonator; size 20 mum; size 5 mum; temperature coefficient of frequency reduction; temperature compensation; Acoustic devices; Aluminum; Boron; Charge carriers; Doping; Frequency; Micromechanical devices; Q factor; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424221
