Title :
A millimeter-wave harmonic optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT
Author :
Chang-Soon Choi ; Woo-Young Choi ; Dae-Hyun Kim ; Kwang-Seok Seo
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
We investigate the InAlAs/InGaAs metamorphic HEMT on GaAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection of 1.55 /spl mu/m lightwaves and harmonic optoelectronic up-conversion into the millimeter-wave band. By changing the bias conditions of the HEMT, the harmonic optoelectronic mixing efficiency can be selectively enhanced while suppressing undesired mixing components. The metamorphic HEMT as a harmonic optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic millimeter-wave transmission systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; harmonics; high electron mobility transistors; indium compounds; microwave photonics; millimetre wave field effect transistors; millimetre wave frequency convertors; millimetre wave mixers; optical fibre communication; optical frequency conversion; optical receivers; photodetectors; 1.55 micron; GaAs substrate; HEMT bias conditions; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; base station architecture; fiber-optic millimeter-wave transmission systems; harmonic optoelectronic mixing efficiency; harmonic optoelectronic up-conversion; millimeter-wave band; millimeter-wave harmonic optoelectronic mixer; mixing components; photodetection; Gallium arsenide; Indium compounds; Indium gallium arsenide; Millimeter wave communication; Millimeter wave technology; Optical attenuators; Optical mixing; Optical modulation; Substrates; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212629
