Title :
CMOS-MEMS Integration: Why, How and What?
Author_Institution :
SPDT/MEMS, IMEC, Leuven
Abstract :
CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing. Poly-SiGe provides the desired material properties for MEMS applications at significantly lower temperatures compared to Poly-Si. A case study of a CMOS-integrated SiGe gyroscope will be presented
Keywords :
CMOS integrated circuits; micromechanical devices; CMOS-MEMS integration; CMOS-integrated SiGe gyroscope; SiGe; microelectromechanical systems; CMOS process; Costs; Germanium silicon alloys; Instruments; Material properties; Microelectromechanical systems; Micromechanical devices; Packaging; Silicon germanium; Temperature; CMOS-MEMS integration; poly-SiGe; technology;
Conference_Titel :
Computer-Aided Design, 2006. ICCAD '06. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
1-59593-389-1
Electronic_ISBN :
1092-3152
DOI :
10.1109/ICCAD.2006.320128
