• DocumentCode
    1649261
  • Title

    CMOS-MEMS Integration: Why, How and What?

  • Author

    Witvrouw, Ann

  • Author_Institution
    SPDT/MEMS, IMEC, Leuven
  • fYear
    2006
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing. Poly-SiGe provides the desired material properties for MEMS applications at significantly lower temperatures compared to Poly-Si. A case study of a CMOS-integrated SiGe gyroscope will be presented
  • Keywords
    CMOS integrated circuits; micromechanical devices; CMOS-MEMS integration; CMOS-integrated SiGe gyroscope; SiGe; microelectromechanical systems; CMOS process; Costs; Germanium silicon alloys; Instruments; Material properties; Microelectromechanical systems; Micromechanical devices; Packaging; Silicon germanium; Temperature; CMOS-MEMS integration; poly-SiGe; technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 2006. ICCAD '06. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    1-59593-389-1
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2006.320128
  • Filename
    4110130