Title :
Large area InGaN/GaN nanowire solar cells on silicon
Author :
Nguyen, Hieu Pham Trung ; Li, Yukun ; Mi, Zetian
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ~0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; nanophotonics; nanowires; optoelectronic devices; silicon; solar cells; wide band gap semiconductors; carrier localization; large area nanowire solar cells on silicon; nonradiative surface recombination; Current measurement; Gallium nitride; Nanoscale devices; Photovoltaic cells; Silicon; Substrates; Wires;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
