Title :
Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs
Author :
Sanghoon Lee ; Cho, Heung-Jae ; Son, Younghwan ; Lee, Dong Seup ; Shin, Hyungcheol
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
We proposed a new method for characterization of oxide traps leading to Random Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band structure. Through this method and drain and gate current RTN measurement, we extracted positions, energy levels and activation energies of oxide traps in high-k dielectric as well as in interfacial layer.
Keywords :
MOSFET; band structure; semiconductor device noise; energy band structure; high-k dielectric; interfacial layer; metal gate MOSFET; metal oxide semiconductor field effect transistors; oxide traps; random telegraph noise; Current measurement; Dielectric measurements; Energy measurement; Energy states; High K dielectric materials; High-K gate dielectrics; Lead compounds; MOSFETs; Position measurement; Telegraphy;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424227
