DocumentCode
1649373
Title
Variability and yield improvement: rules, models, and characterization
Author
Shepard, K.L. ; Maynard, D.N.
Author_Institution
Columbia Integrated Syst. Lab, Columbia Univ., New York, NY
fYear
2006
Firstpage
834
Lastpage
835
Abstract
Yield and variability are becoming detractors for successful design in sub-90-nm process technologies. We consider the fundamental lithography and process issues that are driving variability and yield and the role of design rules in future processes. We examine the importance of layout-aware modeling and layout regularity, including advantages and cost. Characterization structures for examining the electrical effects of device-level variability are discussed as well as circuit techniques for mitigating variability and yield challenges
Keywords
circuit layout; lithography; nanoelectronics; device-level variability; layout regularity; layout-aware modeling; lithography; yield improvement; Bridge circuits; Costs; Doping; Fluctuations; Geometry; Integrated circuit yield; Lithography; Permission; Process design; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2006. ICCAD '06. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
1-59593-389-1
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2006.320132
Filename
4110134
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