Title :
Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI?
Author :
Teo, Z.Q. ; Ang, D.S. ; See, K.S.
Abstract :
In this paper p-MOSFETs with 2.8 nm SiO2 gate dielectrics were tested. This study shows experimental observations which contradict the RD model: (i) amount of ¿Iep recovered in the recovery interval under dynamic NBTI remains constant with stress/recovery cycling; (ii) abrupt change in ¿Iep, observed typically at the start of a stress or recovery cycle, is an artifact caused by interfacial oxide traps participating in the charge pumping (CP) process; (iii) stress induced ¿Nit is relatively permanent (recovery is negligible over extended period); (iv) the exponent of -0.16 for ¿Iep is an artifact due to "charge pumping of interfacial oxide traps" (after eliminating this parasitic oxide trap component, the exponent for ANn is -0.27); (v) a consistent exponent of-0.27 for ¿Nit, is observed over a wide temperature range (this does not corroborate a dispersive transport mechanism).
Keywords :
MOSFET; elemental semiconductors; interface states; reaction-diffusion systems; semiconductor device testing; silicon; silicon compounds; NBTI; Si-SiO2; charge pumping; gate dielectrics; interface state generation; interface state recovery; interfacial oxide traps; p-MOSFET; reaction-diffusion model; size 2.8 nm; stress-recovery cycling; Charge pumps; Dielectrics; Dispersion; Interface states; MOSFET circuits; Niobium compounds; Stress; Temperature distribution; Testing; Titanium compounds;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424233
