New degradation mechanisms and reliability performance in tunneling field effect transistors

Author

Jiao, G.F. ; Chen, Z.X. ; Yu, H.Y. ; Huang, X.Y. ; Huang, D.M. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L. ; Li, Ming-Fu

Author_Institution

Dept. Microelectron., Fudan Univ., Shanghai, China

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current I_d is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field E_x at the gate/source overlapping region due to the P⁺ doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.

Keywords

field effect transistors; interface states; internal stresses; nanowires; reliability; silicon; HC stress; PBTI; Si; degradation mechanisms; doping; gate-source overlapping region; interface trap; physical analysis; reliability performance; silicon nanowires; tunneling field; tunneling field effect transistors; Current measurement; Degradation; Doping; Electric variables measurement; FETs; MOSFET circuits; Performance analysis; Stress measurement; Time measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424234

Filename

5424234