DocumentCode :
1649614
Title :
Compact modeling of flicker noise variability in small size MOSFETs
Author :
Morshed, Tanvir H. ; Dunga, Mohan V. ; Zhang, Jodie ; Lu, Darsen D. ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of EECS, Univ. of California, Berkeley, CA, USA
fYear :
2009
Firstpage :
1
Lastpage :
4
Abstract :
A compact model has been developed to capture the variability of flicker noise resulting from the reduction in size of state of the art MOSFETs. The underlying physics of flicker noise in small area MOSFETs has been verified by two means: Monte Carlo simulation and analytic modeling. The statistical distribution of flicker noise is reported for the first time, supported by experimental data from two sets of devices with different areas. The developed model is capable of predicting the area dependence of noise at any frequency at desired %Yield.
Keywords :
MOSFET; Monte Carlo methods; flicker noise; semiconductor device models; semiconductor device noise; statistical distributions; MOSFET; Monte Carlo simulation; analytic modeling; compact modeling; flicker noise variability; statistical distribution; 1f noise; Circuit noise; Frequency; Low-frequency noise; MOSFETs; Noise shaping; Predictive models; Semiconductor device modeling; Semiconductor device noise; Statistical distributions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
Type :
conf
DOI :
10.1109/IEDM.2009.5424237
Filename :
5424237
Link To Document :
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