Title :
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
Author :
Fugazza, D. ; Ielmini, D. ; Lavizzari, S. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milano, Italy
Abstract :
Understanding the effect of size scaling on resistance window in phase-change memory (PCM) requires accurate models for conduction in the amorphous phase of the active chalcogenide material. This work presents a new conduction model for the chalcogenide amorphous phase, describing Poole-Frenkel (PF) transport through localized states with distributed activation energy. The new model accounts for the scaling dependence of resistance, activation energy and current noise. Scaling perspectives for resistance window and noise amplitude at nodes F = 45 - 8 nm are finally shown.
Keywords :
Poole-Frenkel effect; amorphous semiconductors; current fluctuations; localised states; phase change memories; Poole-Frenkel transport; anomalous resistance scaling; chalcogenide amorphous phase; conduction model; current noise; distributed activation energy; distributed-Poole-Frenkel modeling; fluctuations; localized states; noise amplitude; phase-change memory devices; resistance window; Amorphous materials; Electric resistance; Electrical resistance measurement; Fluctuations; Phase change materials; Phase change memory; Pulse measurements; Pulse modulation; Sociotechnical systems; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424238
