Title :
A Fast Block Structure Preserving Model Order Reduction for Inverse Inductance Circuits
Author :
Yu, Hao ; Shi, Yiyu ; He, Lei ; Smart, David
Author_Institution :
EE Dept., California Univ., Los Angeles, CA
Abstract :
Most existing RCL-1 circuit reductions stamp inverse inductance L-1 elements by a second-order nodal analysis (NA). The NA formulation uses nodal voltage variables and describes inductance by nodal susceptance. This leads to a singular matrix stamping in general. We introduce a new circuit stamping for RCL-1 circuits using branch vector potentials. The new circuit stamping results in a first-order circuit matrix that is semi-positive definite and non-singular. We call this as vector-potential based nodal analysis (VNA). It enables an accurate and passive reduction. In addition, to preserve the structure of state matrices such as sparsity and hierarchy, we represent the flat VNA matrix in a bordered-block diagonal (BBD) form. This enables us to build and simulate the macromodel efficiently. In experiments performed on several test cases, our method achieves up to 15times faster modeling building time, up to 33times faster simulation time, and as much as 67times smaller waveform error compared to SAPOR, the best existing second order RCL-1 reduction method
Keywords :
RLC circuits; circuit analysis computing; inductance; matrix algebra; reduced order systems; bordered-block diagonal form; branch vector potential; circuit matrix; circuit stamping; fast block structure; inverse inductance circuit; model order reduction; nodal susceptance; nodal voltage variable; passive reduction; singular matrix stamping; state matrices; vector-potential based nodal analysis; Algorithm design and analysis; Circuit simulation; Coupling circuits; Helium; Inductance; Integrated circuit modeling; Matrix decomposition; Permission; Power system modeling; RLC circuits; Inductance and Interconnect Modeling; Model Order Reduction;
Conference_Titel :
Computer-Aided Design, 2006. ICCAD '06. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
1-59593-389-1
Electronic_ISBN :
1092-3152
DOI :
10.1109/ICCAD.2006.320098