• DocumentCode
    1649759
  • Title

    Joint Design-Time and Post-Silicon Minimization of Parametric Yield Loss using Adjustable Robust Optimization

  • Author

    Mani, Murari ; Singh, Ashish K. ; Orshansky, Michael

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
  • fYear
    2006
  • Firstpage
    19
  • Lastpage
    26
  • Abstract
    Parametric yield loss due to variability can be effectively reduced by both design-time optimization strategies and by adjusting circuit parameters to the realizations of variable parameters. The two levels of tuning operate within a single variability budget, and because their effectiveness depends on the magnitude and the spatial structure of variability their joint co-optimization is required. In this paper we develop a formal optimization algorithm for such co-optimization and link it to the control and measurement overhead via the formal notions of measurement and control complexity. We describe an optimization strategy that unifies design-time gate-level sizing and post-silicon adaptation using adaptive body bias at the chip level. The statistical formulation utilizes adjustable robust linear programming to derive the optimal policy for assigning body bias once the uncertain variables, such as gate length and threshold voltage, are known. Computational tractability is achieved by restricting optimal body bias selection policy to be an affine function of uncertain variables. We demonstrate good run-time and show that 5-35% savings in leakage power across the benchmark circuits are possible. Dependence of results on measurement and control complexity is studied and points of diminishing returns for both metrics are identified
  • Keywords
    adaptive systems; circuit CAD; optimisation; stability; adaptive body bias; adjustable robust linear programming; adjustable robust optimization; affine function; benchmark circuit; computational tractability; control complexity; formal optimization algorithm; gate-level sizing; joint design-time; leakage power; optimal body bias selection policy; parametric yield loss; post-silicon adaptation; post-silicon minimization; statistical formulation; Algorithm design and analysis; Circuit optimization; Circuit synthesis; Design optimization; Energy consumption; Permission; Robustness; Semiconductor device measurement; Threshold voltage; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 2006. ICCAD '06. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    1-59593-389-1
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2006.320100
  • Filename
    4110148