• DocumentCode
    1649765
  • Title

    Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

  • Author

    Reid, Dave ; Millar, Campbell ; Roy, Gareth ; Roy, Scott ; Asenov, Asen

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 105 microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed statistical enhancement techniques, which deliver a high degree of statistical accuracy at a greatly reduced computational cost.
  • Keywords
    MOSFET; semiconductor doping; statistical analysis; 3D simulations; LER variability; MOSFET; RDD variability; line edge roughness; random discrete dopant; size 35 nm; statistical enhancement technique; statistical threshold voltage variation; Analytical models; Computational modeling; Gaussian distribution; MOSFET circuits; Microscopy; Probability distribution; Silicon; Statistical analysis; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424241
  • Filename
    5424241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649765