Title :
Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-
Author :
Kita, K. ; Wang, S.K. ; Yoshida, M. ; Lee, C.H. ; Nagashio, K. ; Nishimura, T. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Based on the understanding of kinetic views of GeO desorption from GeO2/Ge stacks, thermodynamic control of the qualities of both GeO2 films and GeO2/Ge interfaces was demonstrated. It was proposed to characterize the effects of GeO desorption on GeO2 by the optical absorption. In addition, MIS band alignment was also discussed from the viewpoint of the effects of metal-GeO2 interaction at the top interface.
Keywords :
desorption; field effect transistors; germanium compounds; oxidation; thin films; Ge FET; GeO desorption effect; GeO2; GeO2-metal interaction; MIS band alignment; optical absorption; perfect interface control; thermodynamic control; Absorption; Annealing; Diffusion processes; Kinetic theory; Optical films; Oxidation; Pressure control; Spectroscopy; Temperature; Thermodynamics;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424243
