DocumentCode :
1649832
Title :
Widely tunable semiconductor laser based on step-chirped sampled Bragg grating
Author :
Ting Chen ; Yajuan Qian ; Yuechun Shi ; Rulei Xiao ; Xiangfei Chen
Author_Institution :
Nat. Lab. of Solid State Microstructures & Collaborative Innovation, Nanjing Univ., Nanjing, China
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, a new kind of tunable distributed Bragg reflector (DBR) laser based on the step-chirped sampled Bragg grating (SBG), has been proposed and studied. Based on analysis and simulations, it has been shown that a comb-like reflectivity spectrum with flat envelop covering over 40 nm can be realized with the proposed structure. Static characteristics of the DBR laser, including the wavelength tuning range, output power, side-mode suppression ratio (SMSR), and L-I curves, are stimulated. The tuning range of 40 nm can be obtained and the laser threshold current is around 12 mA.
Keywords :
Bragg gratings; distributed Bragg reflector lasers; laser tuning; reflectivity; semiconductor lasers; L-I curves; comb-like reflectivity spectrum; laser threshold current; output power; side-mode suppression ratio; static characteristics; step-chirped sampled Bragg grating; tunable distributed Bragg reflector laser; tuning range; wavelength tuning range; widely tunable semiconductor laser; Bragg gratings; Chirp; Distributed Bragg reflectors; Gratings; Optical fiber communication; Reflection; Tuning; DBR; Tunable laser; step-chirped Sampled grating; vernier effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communications and Networks (ICOCN), 2015 14th International Conference on
Conference_Location :
Nanjing
Type :
conf
DOI :
10.1109/ICOCN.2015.7203777
Filename :
7203777
Link To Document :
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