Title :
Compact model for layout dependent variability
Author :
Aikawa, H. ; Sanuki, T. ; Sakata, A. ; Morifuji, E. ; Yoshimura, H. ; Asami, T. ; Otani, H. ; Oyamatsu, H.
Author_Institution :
Adv. Logic Technol. Dept., Toshiba Corp. Semicond. Co., Oita, Japan
Abstract :
We have developed a compact model which deals with MOSFET characteristic variations arising from design layout dependences. It treats many stress related variations and their interactions that are especially important in 45 nm technology node. It is demonstrated that the model can predict MOSFET characteristics used in standard cells with high accuracy.
Keywords :
MOSFET; integrated circuit layout; MOSFET characteristic; design layout dependences; layout dependent variability compact model; size 45 nm; CMOS technology; DSL; Electronic mail; Large scale integration; Logic; MOSFET circuits; Manufacturing; Predictive models; Semiconductor device modeling; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424244
