A non contact characterization technique of the defect states of high k dielectrics using THz radiation

Author

Sengupta, A. ; Bandyopadhyay, A. ; Federici, J.F. ; Grebel, H.

Author_Institution

New Jersey Inst. of Technol., Newark

fYear

2006

Firstpage

1

Lastpage

4

Abstract

The effect of high-k dielectric Hafnium dioxide films on 200 mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time- resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.

Keywords

defect states; elemental semiconductors; hafnium compounds; high-k dielectric thin films; silicon; submillimetre waves; substrates; time resolved spectra; Hafnium dioxide films; Si; THz radiation; high k dielectrics; p-type silicon substrates; silicon dioxide; size 200 mm; terahertz time-resolved spectroscopy; visible pump/THz probe spectroscopy; Dielectric materials; Dielectric substrates; Electrochemical impedance spectroscopy; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Pulse amplifiers; Resists; Silicon; Submillimeter wave technology; Terahertz time domain spectroscopy; characterization; defect states; high dielectric constant materials; microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Sarnoff Symposium, 2006 IEEE

Conference_Location

Princeton, NJ

Print_ISBN

978-1-4244-0002-7

Type

conf

DOI

10.1109/SARNOF.2006.4534806

Filename

4534806