• DocumentCode
    1649917
  • Title

    First CMOS integration of ultra thin body and BOX (UTB2) structures on bulk direct silicon bonded (DSB) wafer with multi-surface orientations

  • Author

    Bidal, G. ; Boeuf, F. ; Denorme, S. ; Laviron, C. ; Bourdelle, K. ; Loubet, N. ; Campidelli, Y. ; Beneyton, R. ; Moriceau, H. ; Fournel, F. ; Morin, P. ; Barnola, S. ; Salvetat, T. ; Perreau, P. ; Gouraud, P. ; Leverd, F. ; Le-Gratiet, B. ; Huguenin, J.L.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    For the first time we demonstrate the CMOS integration of undoped fully-depleted Ultra Thin Body and BOX devices (UTB2) with (110)/(100) substrate crystal orientation for pFET and nFET respectively. For this, we used an original 3D-folded Bulk+/Silicon-On-Nothing (SON) process on DSB substrate. Resulting multi-surface orientations devices are studied.
  • Keywords
    CMOS integrated circuits; field effect transistors; wafer bonding; (100) substrate crystal orientation; (110) substrate crystal orientation; 3D-folded bulk process; BOX device; CMOS integration; bulk direct silicon bonded wafer; complementary metal-oxide-semiconductor; multisurface orientation devices; nFET; pFET; silicon-on-nothing process; ultra thin body; Annealing; Creep; Epitaxial growth; Etching; Germanium silicon alloys; Implants; Silicon germanium; Solids; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424247
  • Filename
    5424247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649917